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1

Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects

Gerald Beyer, Alessandra Satta, Jörg Schuhmacher, Karen Maex, Wim Besling, Olli Kilpela, Hessel Sprey, Georg Tempel

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 1014 KB

english, 2002

2

Study of Cu diffusion in an Al–1 wt.%Si–0.5 wt.%Cu bond pad with an Al–1 wt.%Si bond wire attached using scanning electron microscopy

P. Cosemans, J. D'Haen, A. Witvrouw, J. Proost, M. D'Olieslaeger, W. De Ceuninck, K. Maex, L. De Schepper

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 3.16 MB

english, 1998

3

The Buddhist roots of mindfulness training: a practitioners view

Journal:

Contemporary Buddhism

Year:

2011

Language:

english

File:

PDF, 109 KB

english, 2011

4

Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

Grossar, E., Stucchi, M., Maex, K., Dehaene, W.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2006

Language:

english

File:

PDF, 1.02 MB

english, 2006

5

Comparative Philosophy in the Low Countries || From Mount Lu to the Agora: Returning to the Marketplace

P. Konings, E. Maex and G. Bogaerts

Journal:

Philosophy East and West

Year:

1995

Language:

english

File:

PDF, 157 KB

english, 1995

6

The reasons why metals catalyze the nucleation and growth of carbon nanotubes and other carbon nanomorphologies

Santiago Esconjauregui, Caroline M. Whelan, Karen Maex

Journal:

Year:

2009

Language:

english

File:

PDF, 864 KB

english, 2009

7

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

C. Detavernier, R.L. Van Meirhaeghe, W. Vandervorst, K. Maex

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 471 KB

english, 2004

8

Low temperature spike anneal for Ni-silicide formation

A. Lauwers, J.A. Kittl, M. Van Dal, O. Chamirian, R. Lindsay, M. de Potter, C. Demeurisse, C. Vrancken, K. Maex, X. Pagès, K. Van der Jeugd, V. Kuznetsov, E. Granneman

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 625 KB

english, 2004

9

In-situ sem observation of electromigration in thin metal films at accelerated stress conditions

J. d'Haen, J. Van Olmen, Z. Beelen, J.V. Manca, T. Martens, W. De Ceuninck, M. d'Olieslaeger, L. De Schepper, M. Cannaerts, K. Maex

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 265 KB

english, 2000

10

The influence of addition elements on the early resistance changes observed during electromigration testing of Al metal lines

W.A De Ceuninck, V D'Haeger, J Van Olmen, A Witvrouw, K Maex, L De Schepper, P De Pauw, A Pergoot

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 307 KB

english, 1998

11

The dependence of stress induced voiding on line width studied by conventional and high resolution resistance measurements

A. Witvrouw, K. Maex, W. De Ceuninck, G. Lekens, J. D'Haen, L. De Schepper

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 374 KB

english, 1998

12

Dynamics of electromigration induced void/hillock growth and precipitation/dissolution of addition elements studied by in-situ scanning electron microscopy resistance measurements

J. D’Haen, P. Cosemans, J.V. Manca, G. Lekens, T. Martens, W. De Ceuninck, M. D’Olieslaeger, L. De Schepper, K. Maex

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 370 KB

english, 1999

13

The kinetics of the early stages of electromigration and concurrent temperature induced processes in thin film metallisations studied by means of an in-situ high resolution resistometric technique

J. Van Olmen, J.V. Manca, W. De Ceuninck, L. De Schepper, V. D’Haeger, A. Witvrouw, K. Maex, B. Vandevelde, E. Beyne, L. Tielemans

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 167 KB

english, 1999

14

Modeling and microstructural characterization of incubation, time-dependent drift and saturation during electromigration in Al–Si–Cu stripes

A. Witvrouw, H. Bender, Ph. Roussel, K. Maex

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 377 KB

english, 1999

15

Optimized thermal processing for Ti-capped CoSi2 for 0.13 μm technology

R. Lindsay, A. Lauwers, M. de Potter, N. Roelandts, C. Vrancken, K. Maex

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 645 KB

english, 2001

16

Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrier

D. Ernur, F. Iacopi, L. Carbonell, Herbert Struyf, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 848 KB

english, 2003

17

Overview of the kinetics of the early stages of electromigration under low (= realistic) current density stress

J. Van Olmen, J.V. Manca, W. De Ceuninck, L. De Schepper, V. D'Haeger, A. Witvrouw, K. Maex

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 375 KB

english, 1998

18

Wafer thermal desorption spectrometry in a rapid thermal processor using atmospheric pressure ionization mass spectrometry

Vereecke, G., Kondoh, E., Richardson, P., Maex, K., Heyns, M.M.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2000

Language:

english

File:

PDF, 120 KB

english, 2000

19

Low dielectric constant materials for microelectronics

Maex, K., Baklanov, M. R., Shamiryan, D., lacopi, F., Brongersma, S. H., Yanovitskaya, Z. S.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 2.87 MB

english, 2003

20

Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

D. Shamiryan, M. R. Baklanov, S. Vanhaelemeersch, K. Maex

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2002

Language:

english

File:

PDF, 495 KB

english, 2002

21

Thermomechanical Properties of Nickel Silicide: Dependence on the Microstructure

Torregiani, C., D'Haen, Jan, Opsomer, K., Van Dal, M.J., Van Houtte, Paul, Maex, Karen

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 797 KB

english, 2005

22

A new approach for the calculation of line capacitances of two-layer IC interconnects

H. Ymeri, B. Nauwelaers, K. Maex, D. De Roest

Journal:

Microwave and Optical Technology Letters

Year:

2000

Language:

english

File:

PDF, 134 KB

english, 2000

23

The isocurrent test: A promising tool for wafer-level evaluation of the interconnect reliability

A. Witvrouw, S. van Dooren, D. Wouters, M. van Dievel, K. Maex

Journal:

Microelectronics Reliability

Year:

1996

Language:

english

File:

PDF, 282 KB

english, 1996

24

Ion-beam-induced silicidation and its use in very-large-scale integration processing

K. Maex, L. Van den Hove, R.F. De Keersmaecker

Journal:

Thin Solid Films

Year:

1986

Language:

english

File:

PDF, 755 KB

english, 1986

25

Thermal stability and interface bowing of submicron TiSi2/polycrystalline silicon

H. Norström, K. Maex, P. Vandenabeele

Journal:

Thin Solid Films

Year:

1991

Language:

english

File:

PDF, 810 KB

english, 1991

26

Two-step anneals to avoid bridging during Co silicidation

R.J. Schreutelkamp, P. Vandenabeele, B. Deweerdt, R. Verbeeck, K. Maex

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 461 KB

english, 1993

27

Influence of temperature on the properties of sputtered AlSiCu films

W. De Bosscher, M. Matilainen, A. Witvrouw, K. Maex

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 936 KB

english, 1993

28

Influence of the anti reflective coating on the electromigration resistance of 0.5 μm technology metal-2 line structures

R. Stevens, A. Witvrouw, Ph.J. Roussel, K. Maex, H. Meynen, A. Cuthbertson

Journal:

Applied Surface Science

Year:

1995

Language:

english

File:

PDF, 548 KB

english, 1995

29

Influence of the electron mean free path on the resistivity of thin metal films

W. Zhang, S.H. Brongersma, O. Richard, B. Brijs, R. Palmans, L. Froyen, K. Maex

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 343 KB

english, 2004

30

Study of thermal stability of nickel silicide by X-ray reflectivity

M. Van Hove, Y. Travaly, T. Sajavaara, B. Brijs, W. Vandervorst, A. Lauwers, O. Chamirian, J.A. Kittl, A.M. Jonas, K. Maex

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 284 KB

english, 2005

31

Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates

J.A. Kittl, M.A. Pawlak, A. Lauwers, C. Demeurisse, T. Hoffmann, A. Veloso, K.G. Anil, S. Kubicek, M. Niwa, M.J.H. van Dal, O. Richard, M. Jurczak, C. Vrancken, T. Chiarella, S. Brus, K. Maex, S. Bies

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 475 KB

english, 2006

32

A new method for the lifetime determination of submicron metal interconnects by means of a parallel test structure

K. Vanstreels, M. D’Olieslaeger, W. De Ceuninck, J. D’Haen, K. Maex

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

33

Ni based silicides for 45 nm CMOS and beyond

Anne Lauwers, Jorge A. Kittl, Mark J.H. Van Dal, Oxana Chamirian, Malgorzata A. Pawlak, Muriel de Potter, Richard Lindsay, Toon Raymakers, Xavier Pages, Bencherki Mebarki, Tushar Mandrekar, Karen Maex

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 644 KB

english, 2004

34

Silicides for integrated circuits: TiSi2 CoSi2

Journal:

Materials Science and Engineering: R: Reports

Year:

1993

Language:

english

File:

PDF, 7.83 MB

english, 1993

35

Plasma sealing of a low-K dielectric polymer

A. Martin Hoyas, J. Schuhmacher, C.M. Whelan, J.P. Celis, K. Maex

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 381 KB

english, 2004

36

Stress evolution during Ni–Si compound formation for fully silicided (FUSI) gates

C. Torregiani, C. Van Bockstael, C. Detavernier, C. Lavoie, A. Lauwers, K. Maex, J.A. Kittl

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 367 KB

english, 2007

37

A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

I. de Wolf, D.J. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, H.E. Maes

Journal:

Microelectronics Reliability

Year:

1997

Language:

english

File:

PDF, 326 KB

english, 1997

38

Effect of implantation oxide on the Ti- and Co-silicidation of narrow diffusion and poly-lines

A Lauwers, A Naem, M de Potter, K Maex

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 488 KB

english, 1998

39

Integration of Cu and low-k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures

R.A. Donaton, B. Coenegrachts, M. Maenhoudt, I. Pollentier, H. Struyf, S. Vanhaelemeersch, I. Vos, M. Meuris, W. Fyen, G. Beyer, Z. Tokei, M. Stucchi, I. Vervoort, D. De Roest, K. Maex

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 857 KB

english, 2001

40

Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide

A Lauwers, M de Potter, O Chamirian, R Lindsay, C Demeurisse, C Vrancken, K Maex

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 1.33 MB

english, 2002

41

Dependence of the minimal PVD TA(N) sealing thickness on the porosity of Zirkon™ LK dielectric films

F Iacopi, C Zistl, C Jehoul, Zs Tokei, Q.T Le, A Das, C Sullivan, G Prokopowicz, D Gronbeck, M Gallagher, J Calvert, K Maex

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 718 KB

english, 2002

42

Ni- and Co-based silicides for advanced CMOS applications

J.A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, M. De Potter, R. Lindsay, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 357 KB

english, 2003

43

Single damascene integration of porous Zirkon™ version 1 low-k dielectric films

S. Malhouitre, C. Jehoul, J. Van Aelst, H. Struyf, S. Brongersma, L. Carbonell, I. Vos, G. Beyer, M. Van Hove, D. Gronbeck, M. Gallagher, J. Calvert, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 287 KB

english, 2003

44

Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies

A Lauwers, P Besser, T Gutt, A Satta, M de Potter, R Lindsay, N Roelandts, F Loosen, S Jin, H Bender, M Stucchi, C Vrancken, B Deweerdt, K Maex

Journal:

Microelectronic Engineering

Year:

2000

Language:

english

File:

PDF, 2.30 MB

english, 2000

45

Low-k dielectric materials

D Shamiryan, T Abell, F Iacopi, K Maex

Journal:

Materials Today

Year:

2004

Language:

english

File:

PDF, 1.86 MB

english, 2004

46

Characterisation of HF-last cleaning of ion-implanted Si surfaces

E. Kondoh, M.R. Baklanov, F. Jonckx, K. Maex

Journal:

Materials Science in Semiconductor Processing

Year:

1998

Language:

english

File:

PDF, 514 KB

english, 1998

47

Damage minimized plasma pore sealing of microporous low k dielectrics

Thomas Abell, Karen Maex

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 352 KB

english, 2004

48

Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability

Y.-L. Li, Zs. Tökei, Ph. Roussel, G. Groeseneken, K. Maex

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 688 KB

english, 2005

49

Investigation of barrier and slurry effects on the galvanic corrosion of copper

D Ernur, S Kondo, D Shamiryan, K Maex

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 934 KB

english, 2002

50

Belgium

Journal:

European Management Journal

Year:

1984

Language:

english

File:

PDF, 687 KB

english, 1984